http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911565-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ed53d42b0f2da7049ebb4fb6cbeb905 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-65 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-354 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
| filingDate | 2019-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaf74d66935b91d56bb3e9057fada65f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e00929ad6f1aaf7b2cc2c5aa68cadbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae290091ff848acb3282c5c392f7804a |
| publicationDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-110911565-A |
| titleOfInvention | A novel transistor device based on N-type SiC and its preparation method |
| abstract | The invention relates to a novel transistor device based on N-type SiC and a preparation method thereof, comprising: selecting a silicon carbide substrate; using a first mask to grow an electron transport layer on the surface of the silicon carbide substrate; growing a perovskite light absorbing layer on the surface; growing an insulating layer on the surface of the perovskite light absorbing layer; growing a gate electrode on the surface of the insulating layer; growing a source-drain electrode on the surface of the silicon carbide substrate using a second mask , and finally the transistor device based on the N-type silicon carbide/perovskite transport layer heterojunction is formed. Since the transistor of the present invention adopts the perovskite light absorption layer/electron transport layer to provide the same polarity photogenerated carriers for the channel, other important parameters such as the mobility and switching speed of the silicon carbide transistor device in the prior art are improved . |
| priorityDate | 2019-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.