| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca46be4e68fa1f5a8b2ef4ab654c490a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-65 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 |
| filingDate |
2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0dbb0fea57be403f5d3b9a1a223e1bd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_faa75bf8fdfef844552265bfa9e1700b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4434f397dce00ea38d6dc8dfee678e1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0faf521cbf55f820d664f9dc304b6fc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5146f80c38f0b5b6bfd837ee4cf9631e |
| publicationDate |
2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106784320-A |
| titleOfInvention |
Substrate reflection enhanced N-type heterojunction HEMT based on CH3NH3PbI3 material and its preparation method |
| abstract |
The invention relates to a substrate light reflection enhanced N-type heterojunction HEMT based on CH 3 NH 3 PbI 3 material and a preparation method thereof. The method includes: selecting a sapphire substrate; forming a light-reflecting layer on the lower surface of the substrate; making source-drain electrodes on the upper surface of the substrate; forming an electron transport layer on the upper surface of the substrate ; A light-absorbing layer of the material; a gate electrode is fabricated on the surface of the light-absorbing layer to finally form an N-type heterojunction HEMT. The present invention uses CH 3 NH 3 PbI 3 to provide a large number of electrons to the channel, and silver-plates the lower surface of the substrate to form a reflection-enhanced HEMT, which has high mobility, fast switching speed, enhanced light absorption and light utilization, and photogenerated current carrying. The number of electrons increases and the photoelectric conversion efficiency is high. In addition, the PCBM material is added to the light absorbing layer to form a heterojunction, which can improve the quality of the light absorbing layer film by filling holes and vacancies, resulting in larger grains and fewer grain boundaries, absorbing more The light generates photogenerated carriers and enhances the device performance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018103646-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111373563-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109037387-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911565-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109065728-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111373563-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111029460-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111029461-A |
| priorityDate |
2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |