http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106299121-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca46be4e68fa1f5a8b2ef4ab654c490a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-354 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2016-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5146f80c38f0b5b6bfd837ee4cf9631e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0faf521cbf55f820d664f9dc304b6fc8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0dbb0fea57be403f5d3b9a1a223e1bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4434f397dce00ea38d6dc8dfee678e1e |
| publicationDate | 2017-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106299121-A |
| titleOfInvention | CMOS device based on CH3NH3PbI3 material and its preparation method |
| abstract | The invention relates to a CMOS device based on CH3NH3PbI3 material and a preparation method thereof, the method comprising: selecting a Si substrate; growing a gate dielectric layer on the surface of the Si substrate; etching an isolation trench on the surface of the gate dielectric layer ; Grow an electron transport layer and a hole transport layer on both sides of the isolation trench; grow CH 3 NH 3 PbI 3 material on the surface of the electron transport layer and the hole transport layer to form a light absorption layer; sputter Al material on the lower surface of the Si substrate Form the back electrode; grow Au material on the surface of the transfer layer to form source and drain electrodes, and finally form a CMOS device. Since the CMOS device of the present invention uses the electron transport layer to transmit electrons to block holes, and the hole transport layer to transmit holes to block electrons, it overcomes the electron - hole recombination in the CMOS device using CH3NH3PbI3 material in the prior art, The disadvantage of low photoelectric conversion efficiency. CMOS devices use CH 3 NH 3 PbI 3 materials to provide a large number of electrons and holes to the channel to form N-type and P-type MOS devices, which have the advantages of low driving power, fast switching speed, and high photoelectric conversion efficiency. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111029460-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110911565-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108011043-A |
| priorityDate | 2016-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.