| abstract |
The present invention provides a processing method. In the processing method of one embodiment, the first nitrided region of the workpiece is etched. The first nitrided region is provided on the first convex portion made of silicon. The workpiece further has a second convex portion, a second nitrided region, and an organic region. The second convex portion is made of silicon, and the second nitride region contains silicon and nitrogen, and is provided on the second convex portion. The organic region covers the first and second protrusions and the first and second nitrided regions. In the processing method, the organic region is partially etched to expose the first nitrided region. Next, a silicon oxide film is formed so as to cover the surface of the intermediate product made of the workpiece. Next, the silicon oxide film is etched so as to expose the upper surface of the first nitride region. Next, the first nitrided region is isotropically etched. |