Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
filingDate |
2018-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8277d6140d22a6eac0ba36239a2d568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e1eb5749b9648572e83a4dc6fabf4ab |
publicationDate |
2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-109817506-A |
titleOfInvention |
The embedding grammar of engraving method and the dimple pattern using the engraving method |
abstract |
The present invention provides the embedding grammar of a kind of engraving method and the dimple pattern using the engraving method, can control the etch quantity being formed on the depth direction of the dimple pattern on surface of substrate.Film in the dimple pattern on the surface that the engraving method is used to will be formed in substrate in process chamber is etched into the cross sectional shape of V shape, which includes following process: being the condition for keeping the etch-rate on the surface of the substrate higher than the etch-rate of the inside of the dimple pattern by the indoor more than two parameter settings of processing;And etching gas is supplied to the surface of the substrate under the described conditions. |
priorityDate |
2017-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |