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filingDate 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109427735-B
titleOfInvention Manufacturing method of semiconductor element and insulating layer
abstract A semiconductor device includes: a first conductive structure having a plurality of sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and at least one side of the first conductive structure An insulating layer between the walls and the respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to the second conductive structure at least through the bottom surface.
priorityDate 2017-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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