| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108962742-B |
| titleOfInvention |
Manufacturing method of semiconductor structure |
| abstract |
The present application discloses a method for manufacturing a semiconductor structure, which relates to the technical field of semiconductors. The method includes: forming a semiconductor layer on a surface of a material layer to be etched on a substrate; forming an amorphous carbon layer on the semiconductor layer; forming a patterned mask layer on the amorphous carbon layer; and The amorphous carbon layer, the semiconductor layer and the material layer to be etched are etched using the mask layer as a mask. The present application can improve the uniformity of the amorphous carbon layer, so that the position of the pattern formed after etching the material layer to be etched does not deviate from the desired position, and the shape of the pattern is a desired shape. |
| priorityDate |
2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |