| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2018-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d8477f12666127f7c0381c03eb1efa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ec72b1af599a0b965df71d430fc766 |
| publicationDate |
2018-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108425100-A |
| titleOfInvention |
Selective deposition of silicon oxide |
| abstract |
The present invention relates to the selective deposition of silicon oxide. The present invention describes methods and apparatus for selectively depositing silicon oxide on silicon oxide surfaces relative to silicon nitride surfaces. The method involves pretreating the substrate surface with ammonia and/or nitrogen plasma, and using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction to selectively deposit silicon oxide on the silicon oxide surface without exposure to Silicon oxide is deposited on the silicon nitride surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111593329-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I720597-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113423864-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113330141-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113330141-B |
| priorityDate |
2017-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |