http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105659366-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4411 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2014-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105659366-B |
| titleOfInvention | Low temperature silicon nitride films using remote plasma CVD techniques |
| abstract | Embodiments of the invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method for forming a silicon nitride layer using remote plasma Chemical Vapor Deposition (CVD) at a temperature of less than 300 degrees celsius is disclosed. Precursors for remote plasma CVD processes may include: TRIS (dimethylamino) silane (TRIS), Dichlorosilane (DCS), Trisilylamine (TSA), bis-tert-butylaminosilane (BTBAS), Hexachlorodisilane (HCDS) or Hexamethylcyclotrisilazane (HMCTZ). |
| priorityDate | 2013-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.