http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448701-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2015-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448701-B |
| titleOfInvention | Method and apparatus for uniformly reducing the characteristic wet etch rate of a silicon nitride film |
| abstract | Disclosed herein are methods and apparatus directed to uniformly reducing the characteristic wet etch rate of silicon nitride films, and in particular methods for depositing SiN films with reduced wet etch rates. The method may comprise adsorbing a film precursor comprising Si onto a semiconductor substrate in a processing chamber to form an adsorption-limited layer of the precursor, and then removing unadsorbed precursor from the volume surrounding the adsorbed precursor . The adsorbed precursors can then react by exposing them to a plasma containing N-containing ions and/or radicals to form a SiN film on the substrate, which can then be made by exposing the SiN film to a He plasma. The SiN film layer is dense. The foregoing steps can then be repeated to form another dense SiN film layer on the substrate. Also disclosed herein is an apparatus for depositing a SiN film with a reduced wet etch rate on a semiconductor substrate using the aforementioned techniques. |
| priorityDate | 2014-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 125.