| abstract |
The present invention provides a kind of pattern formation method, including: utilize the plasma generated by the etching gas comprising perfluorocarbon (CF) class gas, across mask, the silicon-containing film on substrate is etched, this silicon-containing film is formed the etching step of predetermined pattern；Use silicon compound gas, utilize the plasma generated from oxidizing gas or nitriability gas, make the absorption layer oxidation on the surface of described predetermined pattern or nitridation, form silicon oxide film or the film formation step of silicon nitride film on the surface of above-mentioned predetermined pattern. |