| abstract |
Precursors and methods for forming silicon-containing films are described herein. In one aspect, a precursor of formula I is provided: wherein R 1 is selected from straight or branched C 3 -C 10 alkyl, straight or branched C 3 -C 10 alkenyl, straight or branched C 3 -C 10 alkynyl, C 1 -C 6 di Alkylamino, electron-withdrawing group and C 6 -C 10 aryl; R 2 is selected from hydrogen, straight or branched C 1 -C 10 alkyl, straight or branched C 3 -C 6 alkenyl, straight chain or branched C 3 -C 6 alkynyl, C 1 -C 6 dialkylamino, C 6 -C 10 aryl, straight or branched C 1 -C 6 fluorinated alkyl, electron-withdrawing groups and C 4 -C 10 aryl; optionally wherein R 1 and R 2 are joined together to form a ring selected from substituted or unsubstituted aromatic rings or substituted or unsubstituted aliphatic rings; and n=1 or 2. |