| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_efdcec9a5e24f35b6899fcbfb1114d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-4652 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-4652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2010-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7944b1e8b28663c18f31de8047e36aba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b9904fc5de46db77372a3c0207d085f |
| publicationDate |
2015-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102349356-B |
| titleOfInvention |
Plasma processing apparatus |
| abstract |
Provided is a plasma processing apparatus in which a strong induction field can be formed in a vacuum vessel, said apparatus being capable of preventing sputtering and the temperature rise of an antenna conductor and the formation of particles. A plasma processing apparatus (10) comprises a vacuum vessel (11), a high frequency antenna (21) provided between the inner surface (111A) and the outer surface (111B) of the wall of the vacuum vessel (11), and a dielectric partition member (16) for separating the high frequency antenna (21) from the inside portion of the vacuum vessel (11). This makes it possible to form stronger induction field in the vacuum vessel (11) than in an external antenna type apparatus. The partition member (16) can suppress the sputtering of the high frequency antenna (21), the temperature rise of the high frequency antenna (21), and the formation of particles, all of which are caused by the plasma generated in the vacuum vessel (11). |
| priorityDate |
2009-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |