| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
| filingDate |
2007-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc0202b17ba2746f1d27ced58e172d38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0add29afc917ffc261024181ad34ba6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_082da6efd10acbe06f5ce977c3448796
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b8788505097437deb10dd8dfdc8458f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c6bb29fdb914150994579856e5914a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ae70e46e5c4cd26de6f028efaf0c98 |
| publicationDate |
2013-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101379214-B |
| titleOfInvention |
Epitaxial deposition process and apparatus |
| abstract |
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface. |
| priorityDate |
2006-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |