http://rdf.ncbi.nlm.nih.gov/pubchem/reference/34795252

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publicationName Advanced science (Weinheim, Baden-Wurttemberg, Germany)
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bibliographicCitation Bai S, Yang L, Haase K, Wolansky J, Zhang Z, Tseng H, Talnack F, Kress J, Andrade JP, Benduhn J, Ma J, Feng X, Hambsch M, Mannsfeld SCB. Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices. Adv Sci (Weinh). 2023 May;10(15):e2300057. PMID: 36995051; PMCID: PMC10214218.
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date 2023-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/36995051
https://pubmed.ncbi.nlm.nih.gov/PMC10214218
https://doi.org/10.1002/advs.202300057
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http://rdf.ncbi.nlm.nih.gov/pubchem/journal/44166
language English
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title Nanographene‐Based Heterojunctions for High‐Performance Organic Phototransistor Memory Devices

Total number of triples: 39.