http://rdf.ncbi.nlm.nih.gov/pubchem/reference/33168278

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contentType Journal Article
issn 2072-666X
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publicationName Micromachines
startingPage 617
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bibliographicCitation Jia LF, Zhang L, Xiao JP, Cheng Z, Lin DF, Ai YJ, Zhao JC, Zhang Y. E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology. Micromachines (Basel). 2021 May 27;12(6). PMID: 34071834; PMCID: PMC8230248.
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date 2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://pubmed.ncbi.nlm.nih.gov/PMC8230248
https://doi.org/10.3390/mi12060617
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language English
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title E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

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