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contentType Journal Article|Research Support, Non-U.S. Gov't
endingPage 1978
issn 1936-086X
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issueIdentifier 3
pageRange 1970-1978
publicationName ACS Nano
startingPage 1970
bibliographicCitation Tang YB, Yin LC, Yang Y, Bo XH, Cao YL, Wang HE, Zhang WJ, Bello I, Lee ST, Cheng HM, Lee CS. Tunable band gaps and p-type transport properties of boron-doped graphenes by controllable ion doping using reactive microwave plasma. ACS Nano. 2012 Mar 27;6(3):1970–8. doi: 10.1021/nn3005262. PMID: 22352710.
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date 2012-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1021/nn3005262
https://pubmed.ncbi.nlm.nih.gov/22352710
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language English
source https://pubmed.ncbi.nlm.nih.gov/
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title Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma
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Total number of triples: 36.