http://rdf.ncbi.nlm.nih.gov/pubchem/reference/207438178

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contentType Journal Article
endingPage 13773
issn 1573-482X
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issueIdentifier 16
pageRange 13766-13773
publicationName Journal of Materials Science: Materials in Electronics
startingPage 13766
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bibliographicCitation Zhao L, Yang K, Ai Y, Zhang L, Niu X, Lv H, Zhang Y. Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing. Journal of Materials Science: Materials in Electronics. 2018 Jun 21;29(16):13766–73. doi: 10.1007/s10854-018-9507-0.
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date 2018-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
identifier https://doi.org/10.1007/s10854-018-9507-0
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language English
source https://www.crossref.org/
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title Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing

Total number of triples: 28.