http://rdf.ncbi.nlm.nih.gov/pubchem/reference/200865628
Outgoing Links
Predicate
Object
contentType
Journal Article
endingPage
4249
issn
0361-5235
1543-186X
issueIdentifier
8
pageRange
4239-4249
publicationName
Journal of Electronic Materials
startingPage
4239
hasFundingAgency
http://rdf.ncbi.nlm.nih.gov/pubchem/organization/MD5_487baf6554eb36bb22c6138d90a7c50f
bibliographicCitation
Gu Y, Zhang Y, Hua B, Ni X, Fan Q, Gu X. Interface Engineering Enabling Next Generation GaN-on-Diamond Power Devices. Journal of Electronic Materials. 2021 May 31;50(8):4239–49. doi: 10.1007/s11664-021-09011-6.
creator
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_5a3cc5ac33be46cd1c74a9c139bb0243
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_a1f2ea0289020a0bed7d97b2d192a1a0
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_f0bdac2e2e881d2daeba249750ceac2f
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_9137fe389d3788dfc8786b5f58f9a09a
http://rdf.ncbi.nlm.nih.gov/pubchem/author/MD5_3aa44f8c4eb421b99f54ff896f14e514
http://rdf.ncbi.nlm.nih.gov/pubchem/author/ORCID_0000-0001-8191-1647
date
2021-05-31-04:00
^^<
http://www.w3.org/2001/XMLSchema#date
>
identifier
https://doi.org/10.1007/s11664-021-09011-6
isPartOf
http://rdf.ncbi.nlm.nih.gov/pubchem/journal/45479
https://portal.issn.org/resource/ISSN/1543-186X
https://portal.issn.org/resource/ISSN/0361-5235
language
English
source
https://www.crossref.org/
https://scigraph.springernature.com/
title
Interface Engineering Enabling Next Generation GaN-on-Diamond Power Devices
Total number of triples:
25
.