| abstract |
A practical method of manufacturing an organic field-effect transistor is disclosed. By applying the insulating layer having a thickness of 0.3 νm or less to a substantially planar electrode layer, an organic field-effect transistor can be made having a channel length down to 2 νm, satisfying the condition for voltage amplification at voltages well below 10 V, and having an on/off ratio of about 25. |