http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9748499-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f520e9cc997ed7a27b8b2b1a21b1ae43
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-28
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filingDate 1997-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d96d905ef300a91d0f82d3b0d39cdbf
publicationDate 1997-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-9748499-A1
titleOfInvention GaAs SUBSTRATE WITH A PASSIVATING EPITAXIAL GALLIUM SULFIDE FILM AND METHODS FOR FORMING SAME
abstract A passivating epitaxial film of Group III-sulfur material is formed on a III-V compound semiconductor substrate (10) based on the interaction of the substrate with sulfur atoms (40). In a preferred and non-limiting embodiment, en epitaxial Ga2(S2)3 film is formed on a GaAs substrate by exposing a surface (12) of the GaAs substrate to a gaseous sulfur-containing molecule (e.g. H2S), photo-irradiating the sulfur-containing molecule to deposit sulfur atoms on the exposed surface and annealing the sulfur-deposited substrate (10).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490475-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9741815-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9721786-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314017-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8872238-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114686845-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553424-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114686845-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245742-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711350-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015094551-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10199213-B2
priorityDate 1996-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.