| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_531b948f38674f98a728c6b4fd789996
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40df519406a4790c8808e930732e011d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07f6ed8ccc9497566c5c1fdb0c168556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52c9d116d449d209a57f02d0227a7c92 |
| publicationDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9741815-B2 |
| titleOfInvention |
Metal selenide and metal telluride thin films for semiconductor device applications |
| abstract |
In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase selenium or tellurium reactant. In some aspects, methods of forming three-dimensional architectures on a substrate surface are provided. In some embodiments, the method includes forming a metal selenide or metal telluride interface layer between a substrate and a dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between a substrate and a conductive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553424-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10199213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490475-B2 |
| priorityDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |