| abstract |
Method for passivating the sides of a semiconductor component and especially a thin film resistor for reducing conduction in the off state. The method is characterized in that the etched sides (41, 42; 15, 16; 27, 28) of the semiconductor layer (4, 12, 21) of the mesa (4, 5, 9) are passivated before removal of the mask (9) used during etching. The method is applicable to all methods for the manufacture of thin film transistors used in flat liquid cristal screens. |