| abstract |
The present invention relates to a thin film fabrication method and, more specifically, to a thin film fabrication method comprising the steps of: i) causing a growth inhibitor for thin-film formation to be adsorbed to the surface of a substrate; and ii) causing a metal film precursor, a metal oxide film precursor, a metal nitride film precursor, or a silicon nitride film precursor to be adsorbed to the growth inhibitor-adsorbed surface of the substrate, wherein the growth inhibitor for thin-film formation is represented by chemical formula 1 [chemical formula 1] AnBmXo (A is carbon or silicon, B is hydrogen or alkyl of which the carbon number is 1 to 3, X is a halogen, n is an integer of 1 to 15, o is an integer of 1 or higher, and m is 0 to 2n+1), and the metal is one or more types selected from the group consisting of tungsten, cobalt, chromium, aluminum, hafnium, vanadium, niobium, germanium, a lanthanum-group element, an actinium-group element, gallium, tantalum, zirconium, ruthenium, copper, titanium, nickel, iridium, and molybdenum. According to the present invention, provided is a thin film fabrication method, which suppresses a side reaction so as to reduce a thin film growth rate and remove process by-products in the thin film, thereby significantly improving step coverage and the thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure. [Representative drawing] figure 2 |