| abstract |
The present invention relates to a method of manufacturing a thin film, and more particularly, i) adsorbing a growth inhibitor for thin film formation to a surface of a substrate; And ii) adsorbing a metal film precursor, a metal oxide film precursor, a metal nitride film precursor, or a silicon nitride film precursor to the surface of the substrate on which the growth inhibitor is adsorbed, wherein the growth inhibitor for thin film formation is represented by Formula 1 [Formula 1] AnBmXo (The A is carbon or silicon, B is hydrogen or alkyl having 1 to 3 carbon atoms, X is halogen, n is an integer of 1 to 15, o is an integer of 1 or more, and m is 0 to 2n+1.), and the metal is tungsten, cobalt, chromium, aluminum, hafnium, vanadium, niobium, germanium, lanthanide element, actinium element, gallium, tantalum, zirconium, ruthenium, copper, titanium, nickel , It relates to a method for producing a thin film, characterized in that at least one selected from the group consisting of iridium and molybdenum. According to the present invention, by suppressing side reactions, lowering the thin film growth rate and removing process by-products in the thin film, step coverage and thickness uniformity of the thin film are greatly improved even when a thin film is formed on a substrate having a complex structure. There is an effect of providing a method for producing a thin film to be made. |