| abstract |
This method for forming an insulation film on a substrate has reacting, as film-forming gases, an organic silicon compound gas represented by formula (1) below and a non-oxidizing hydrogen-containing gas, and in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, film-forming a fluid silanol compound on a substrate; and then annealing the substrate and change the silanol compound into an insulation film. (1): SiαOβ (O-CmHn)ΓCxHy. Where, m, n, and α are arbitrary integers of at least 1, β, Γ, x, and y are arbitrary integers of at least 0, and β and Γ are not 0 at the same time. |