| abstract |
Provided is a semiconductor device with good reliability. A semiconductor device of the present invention comprising a first oxide, a first conductor, a second conductor and a first insulator on the first oxide, and a third conductor on the first insulator, wherein: the first conductor includes a first crystal; the second conductor has a crystal structure including the same crystal as the first crystal; the first crystal is (111) oriented with respect to the surface of the first oxide; the first oxide includes a second crystal; the second crystal is c-axis oriented with respect to the formed surface of the first oxide; and the lattice mismatch of the first crystal is 8% or less relative to the second crystal. |