| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a028bd3a201f504f7744d73c3a369dae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed15979f74b08173a7bf11a16b005cc2 |
| publicationDate |
2020-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020165990-A1 |
| titleOfInvention |
Semiconductor manufacturing device |
| abstract |
The present invention provides a semiconductor manufacturing device with which it is possible to use a complex gas to etch, at a high speed and a high accuracy, a metal film containing a transition metal element. This semiconductor manufacturing device has: a vacuum container 60; a processing chamber 1 provided in the vacuum container, a sample 3 that has formed thereon a metal film containing a transition metal element being placed on a stage 4 installed in the processing chamber 1; and a vaporization chamber 2 provided in the vacuum container, a vaporization nozzle unit 70 for vaporizing a complex gas raw material liquid fed from the exterior being installed in the vaporization chamber 2. A complex gas obtained by vaporizing the complex gas raw material liquid is introduced into the processing chamber, and the metal film on the sample is etched. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2022123725-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7307175-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022259399-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022123725-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I789900-B |
| priorityDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |