http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020125515-A1

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filingDate 2019-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020125515-A1
titleOfInvention Semiconductor structure and forming method therefor
abstract A semiconductor structure and a forming method therefor. In the semiconductor structure, an electrically conductive structure (300) is disposed on a trench isolation structure (200) so as to utilize the space above the trench isolation structure (200), thereby reducing the space in the whole semiconductor integrated circuit occupied by the electrically conductive structure (300) and facilitating the size reduction of the semiconductor integrated circuit formed.
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Total number of triples: 31.