http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020101281-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b0f45aa801505c3c1fa05aa672f0504 |
| publicationDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020101281-A1 |
| titleOfInvention | Silicon carbide epi wafer |
| abstract | A silicon carbide epi wafer according to an embodiment, comprises: a base substrate; a buffer layer disposed on the base substrate; and a silicon carbide epi layer disposed on the buffer layer. The base substrate includes silicon. The buffer layer comprises: a first buffer layer on the base substrate; a second buffer layer on the first buffer layer; and a third buffer layer on the second buffer layer. The first buffer layer includes a silicon epi layer. |
| priorityDate | 2018-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.