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filingDate 2013-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2015078093-A
titleOfInvention 3C-SiC epitaxial layer manufacturing method, 3C-SiC epitaxial substrate, and semiconductor device
abstract A 3C-SiC epitaxial layer with reduced substrate warpage and improved crystal quality is manufactured. A 3C-SiC epitaxial layer includes a step of epitaxially growing a first 3C-SiC layer on a Si substrate, a step of oxidizing the first 3C-SiC layer, and a surface of the 3C-SiC layer. It is manufactured by a manufacturing method including a step of removing an oxide film and a step of epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the removal of the oxide film. [Selection] Figure 2
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