| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d55b44219a84c850812a4488def924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec83ea8e6721b1a5654b038fdb9b223f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2019-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f7f021ab6dd12145dc4759eacdd33fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8f913e0c2c678dbfe0118473673bae0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af4867747c0b82e431546f20c4e3a843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7efd05dfede8adb00ecf17d782e1b2df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a482bce83eef3c6a169b4ba63be06c59 |
| publicationDate |
2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020100885-A1 |
| titleOfInvention |
Etching method and etching apparatus |
| abstract |
The purpose of this technology is to provide an etching method and an etching apparatus for preventing overetching and semiconductor surface roughness. In this etching method, a mixed gas containing Cl 2 and H 2 is converted into plasma; the plasma gas from the conversion of the mixed gas into plasma is supplied to a treatment chamber 1001 that holds a group III nitride semiconductor; and the group III nitride semiconductor is etched by the plasma gas. The mixed gas contains 1-10 vol% H 2 . |
| priorityDate |
2018-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |