| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32 |
| filingDate |
2019-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_295354131aa78d80859f4b9107141ade
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51bcb7a1b463dd5d5dd5f8a7c0597a84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34c21a8861c45dbe7c96760158af6a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a34a9107b4bcdc10a3ced5eb9ff5a4c5 |
| publicationDate |
2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020066590-A1 |
| titleOfInvention |
Mask blank, transfer mask, and semiconductor-device manufacturing method |
| abstract |
Provided is a mask blank including an etching stopper film: that exhibits a high resistance to dry etching that uses a fluorine-based gas and that is employed when patterning a pattern-forming thin film; and that additionally possesses a high transmittance with respect to exposure light. The present invention provides a mask blank provided with a structure in which an etching stopper film and a pattern-forming thin film are laminated on a translucent substrate in this order, the mask blank being characterized in that: the thin film is formed of a material containing silicon; the etching stopper film is formed of a material containing hafnium, aluminum, and oxygen; and the etching stopper film has a ratio of 0.86 or less in terms of the atomic percentage of the hafnium content with respect to the total content of hafnium and aluminum. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022137502-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3992712-A1 |
| priorityDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |