Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02269 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate |
2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e269baa9f1af99cce3ea0b8dacf28741 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7621af1407accd0bdfbc2d0f9ddd09f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7aa676d2d95f80880cad8e891ec91ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef1367cdd7ee70866edee2308c25987d |
publicationDate |
2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2020028065-A1 |
titleOfInvention |
Cvd based spacer deposition with zero loading |
abstract |
Embodiments of the present disclosure relate to deposition methods for dielectric layers with zero pattern loading characteristics. In one embodiment, the method includes depositing a conformal dielectric layer on the substrate having a patterned area and a blanket area by exposing the substrate to a deposition precursor and a tuning gas simultaneously without the presence of plasma in a process chamber, wherein the deposition precursor is reacted to form a chemical reaction by-product, and the chemical reaction by-product is the same as the tuning gas, and wherein the deposition precursor and the tuning gas are provided at an amount that is more than required for the deposition reaction to occur at the patterned area and the blanket area. |
priorityDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |