http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020018330-A1

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filingDate 2019-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2020018330-A1
titleOfInvention Minimization of carbon loss in ald sio2 deposition on hardmask films
abstract A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.
priorityDate 2018-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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