http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020012907-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1095f2e0b6d12f1baf67bbfe66456aa |
| publicationDate | 2020-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2020012907-A1 |
| titleOfInvention | Plasma processing device and plasma processing method |
| abstract | The purpose of the present invention is to provide a plasma processing device and a plasma processing method with which it is possible to perform plasma etching with high shape controllability and little difference in the application time of high-frequency power among a plurality of plasma processing devices that perform plasma processing while periodically switching between gases. According to the present invention, when controlling, on the basis of the change in plasma impedance that occurs when switching from a first gas at a first step to a second gas at a second step, so as to change a second high-frequency power to be applied to a stage from the value of the second high-frequency power at the first step to the value of the second high-frequency power at the second step, the supply time for the first gas is controlled using the time spanning from the start time of the first step to the supply start time of the first gas and the time spanning from the end time of the first step to the supply end time of the first gas, such that the supply time of the second high-frequency power at the first step is substantially the same as the time of the first step. |
| priorityDate | 2019-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415857418 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID160283 |
Total number of triples: 21.