| abstract |
Embodiments herein disclose a method providing deposition of Gadolinium Oxide (Gd2O3) on a semiconductor substrate. The method comprises of selecting, in an RF-sputter system, a predefined substrate and depositing, in an Ar-plasma struck, the Gd2O3, over the predefined substrate to obtain a layer of the Gd2O3 over the predefined substrate. The Gd2O3 is grown epitaxially over the predefined substrate. The method further provides performing, annealing, of the layer of the Gd2O3 over the predefined substrate at a predefined temperature for a predefined time and obtaining, a layer of the Gd2O3, over the predefined substrate. Embodiment also provides a method for fabricating Semiconductor on Insulator Substrate (SIS). |