| abstract |
Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals. |