http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019159851-A1

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filingDate 2019-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2019159851-A1
titleOfInvention Metal carbide sintered body, and heat-resistant member comprising same for silicon carbide semiconductor production device
abstract [Problem] To provide a metal carbide sintered body that has a high relative density and a superior mechanical strength and that can be produced without conducting sintering under high pressure by hot pressing, HIP, or the like, even when the carbide sintered body is of a metal having a very high melting point. [Means] This carbide sintered body is of at least one metal selected from the group consisting of group 4 elements and group 5 elements in the periodic table, and contains 0.1-10,000 wtppm of elemental Si.
priorityDate 2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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