| abstract |
Disclosed is a semiconductor device comprising: a substrate (1001); a vertical active region formed on the substrate (1001), comprising, in a vertical direction, a sequentially arranged first source/drain region, a channel region (1003-1), and a second source/drain region (1005-1), the first source/drain region including a laterally extending portion extending beyond the upper active region; a gate stack (1015, 1017) formed around the periphery of the channel region (1003-1), the gate stack including the laterally extending portion; and a stacked contact portion formed from the top of the laterally extending portion of the first source/drain region to the laterally extending portion of the first source/drain region. The stacked contact portion comprises three layers sequentially arranged in the vertical direction: a lower layer portion, a middle layer portion (1003-2), and an upper layer portion (1005-2). The lower layer portion contains at least the same element as the element forming the first source/drain region, the middle layer portion (1003-2) contains at least the same element as the element forming the channel region (1003-1), and the upper layer portion (1005-2) contains at least the same element as the element forming the second source/drain region (1005-1). |