| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5eb3e7a35aed04a98a36060bc7b053bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e696ea557d9fb42ac157271665696b72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81149daa5188b63a81a558cc16f985a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64756042c7c54a2a63772dccb404e9f6 |
| publicationDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019060419-A1 |
| titleOfInvention |
WELLBORNE COLLECTOR CONNECTION REGION FOR NARROW DEEPENERS |
| abstract |
Provided is a method of forming an integrated circuit (IC) which comprises forming a second type doped buried layer (BL) (106) in a first type doped substrate (102) . Deep trenches are etched with narrower inner trench rings and wider outer trench rings to the BL. A first sink sink implantation (122) uses ions of the second type with a first dose, a first energy and a first inclination angle. A second deep sink implantation (182) utilizes ions of the second type with a second dose lower than the first dose, a second energy higher than the first energy, and a second inclination angle smaller than the first inclination angle. The outer trench rings and the inner trench rings are dielectrically coated. The dielectric coating is removed from the bottom of the outer trench rings. The outer trench rings are filled with an electroconductive filler material that contacts the substrate and fills the inner trench rings. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3848958-A1 |
| priorityDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |