| abstract |
Embodiments of the present invention generally relate to methods of depositing a conformal layer on high aspect ratio structure surfaces and associated apparatus for carrying out such methods. The conformal layers described in the present invention are formed using PECVD methods in which a semiconductor device comprising a plurality of high aspect ratio elements is disposed on a substrate support in a processing volume of a treatment chamber, gases are supplied to the treatment volume, and a plasma is generated in the pulsed RF power coupling processing volume to the process gases disposed in the processing chamber of the treatment chamber. |