| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_982c205eb01a067f7ee244db2d04bbf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8460523197a4ff8e9cc4a44f2af1477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c1bafc0f7fa261ec87048c5aabef84e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2021c0a8c6be539f82f28bcfd39b322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ed8a42ff72c117b97111f729a2d8c88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce89125c85a0b4197acff2487e206e70 |
| publicationDate |
2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018236358-A1 |
| titleOfInvention |
DUAL PATTERN FORMATION ALLOWED BY ION IMPLANTATION CHARACTERISTICS DEFINED BY SPRAYING |
| abstract |
The present invention provides dual patterning approaches based on spray defined ion implantation characteristics, and integrated circuit structures resulting therefrom. For example, an integrated circuit structure comprises a plurality of semiconductor vanes. Individual fins of the plurality of semiconductor fins have xenon (Xe) or krypton (Kr) atoms therein. A concentration of the Xe or Kr atoms along the side walls of the individual fins of the plurality of semiconductor fins is greater than a concentration of the Xe or Kr atoms at the centers of the individual fins of the plurality of semi fins. -conductrices. A concentration of Xe or Kr atoms in upper portions of the plurality of semiconductor vanes is greater than a concentration of Xe or Kr atoms in lower portions of the plurality of semiconductor vanes. |
| priorityDate |
2017-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |