| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ad6e2fb0f0bfc0ec3087f40d9d85c61d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d78c06b318346850a91c734048d78b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f0154fba7c7cf4485ef2186a98b32458 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B29C67-00 |
| filingDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80088651c4407dcb874337913894d384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1061a1b193ded2d487689596a04e862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3305396a157c20cca283295c92c34c1d |
| publicationDate |
2012-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2012118856-A1 |
| titleOfInvention |
Method And Materials For Double Patterning |
| abstract |
A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018236358-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020174126-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021311394-A1 |
| priorityDate |
2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |