| abstract |
Provided is a semiconductor device having excellent electrical characteristics. A semiconductor device having a transistor, first wiring, and second wiring on a substrate, wherein: the transistor has a first oxide, a first insulator and a second insulator on the first oxide, a second oxide on the first insulator and the second insulator, and an electroconductive body on the second oxide; the first insulator and the second insulator have a region that overlaps the electroconductive body with the second oxide interposed therebetween; the first insulator has a first opening reaching the first oxide; the first wiring is in contact with the upper surface of the first oxide through the first opening; the second insulator has a second opening reaching the first oxide; the second wiring is in contact with the upper surface of the first oxide through the second opening; and each of the first insulator and the second insulator contains an impurity. |