http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018136652-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f056f48f783ed16538ec3ecd7c2b31f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd3ebb744cb962de85c2bb43d1671393 |
| publicationDate | 2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2018136652-A1 |
| titleOfInvention | Method of preferential silicon nitride etching using sulfur hexafluoride |
| abstract | Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing SF 6 , and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material. In one example, the process gas can contain or consist of SF 6 and Ar. In another example, the second material is selected from the group consisting of Si and SiO 2 . |
| priorityDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.