| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eab6384cc5f947de6c2b33f88eeacb8e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21J13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21D37-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B21D37-01 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23B27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4074ec0cb9186d5ddea29c2e4ac110c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55b591a59c4e9da077d63d376841c48b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_305602a46b797fe5ec66bcd64ff4a80a |
| publicationDate |
2018-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2018124279-A1 |
| titleOfInvention |
Vanadium silicon nitride film, vanadium silicon nitride film coated member, and method for manufacturing same |
| abstract |
The vanadium silicon nitride film according to the present invention formed as a hard coating film for a substrate satisfies the conditions 0.30 ≤ a/b ≤ 1.7 and 0.24 ≤ b ≤ 0.36, where a = vanadium element concentration [at%]/(vanadium element concentration [at%] + silicon element concentration [at%] + nitrogen element concentration [at%]), and b = silicon element concentration [at%]/(vanadium element concentration [at%] + silicon element concentration [at%] + nitrogen element concentration [at%]), and has a hardness of 2300 HV or greater. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7304725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11091367-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019035397-A1 |
| priorityDate |
2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |