| abstract |
The present invention suppresses transistor characteristic fluctuation due to static electrification damage, thereby mitigating design limitation needed to eliminate the static electrification damage, and improving the degree of freedom relating to a design for improving the degree of semiconductor integration. This semiconductor device is provided with: a vertical electrode, which is formed in a vertical hole that extends, in the base body thickness direction, from an opening to a region to be connected, and which has a structure wherein a barrier metal film and a conductive material are laminated in this order from the side close to an insulating film exposed in the vertical hole; and a low resistance film, which is provided at a part between the barrier metal film and the insulating film, said part excluding the vicinities of the region to be connected, and which has a resistance value that is lower than that of the insulating film. |