http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018102364-A1

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filingDate 2017-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4337f706e1beb017cf3404b087acc67
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publicationDate 2018-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2018102364-A1
titleOfInvention Method and apparatus for plasma dicing a semi-conductor wafer
abstract The present invention provides a method for plasma dicing a substrate (100). The substrate is provided with a top surface and a bottom surface, the top surface of the substrate having a plurality of street areas (120) and at least one device structure (110). The substrate is placed onto a support film (300) on a frame (310) to form a work piece (320). A process chamber (600) having a plasma source is provided. A work piece support (630) is provided within the plasma process chamber. The work piece is placed onto the work piece support. A plasma (697) is generated from the plasma source in the plasma process chamber. The work piece is processed using the generated plasma and a byproduct generated from the support film while the support film is exposed to the generated plasma.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I799315-B
priorityDate 2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.