http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018047770-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b19eaa8e535da4e4bceed99917a68153 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-12105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04105 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L63-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-295 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023 |
| filingDate | 2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5d54f9b087b63ecf946a0230e5620a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72b3cfac1e04a9dcd5bdfe991a1772e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9513ffe49027347f2187728241b5b0fa |
| publicationDate | 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2018047770-A1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | This method for manufacturing a semiconductor device comprises: a step for preparing a structure wherein a plurality of semiconductor chips (40) having connection terminals (30) in the surfaces are buried in a sealing material (10); a step for forming a first insulating resin film (60) in a region of the surface of the structure, in said surface the connection terminals (30) of the semiconductor chips (40) being buried; a step for providing the first insulating resin film (60) and the structure with a first opening (250) from which parts of the connection terminals (30) are exposed; a step for forming a conductive film (110) so that the conductive film covers the exposed parts of the connection terminals (30) and the first insulating resin film (60); and a step for forming a second insulating resin film (70) on the surface of the conductive film (110) and providing the second insulating resin film (70) with a second opening (300) from which a part of the conductive film (110) is exposed. In the step for forming the second opening (300), the second opening (300) is formed outside the regions of the second insulating resin film (70), said regions being positioned above the semiconductor chips (40). In addition, this method is characterized in that a photosensitive resin composition which contains an alkali-soluble resin, and droplets of which have a surface tension of from 20 mN/m to 45 mN/m (inclusive) as determined by a hanging drop method is used as a resin material that constitutes the first insulating resin film (60). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7322580-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021241447-A1 |
| priorityDate | 2016-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 350.